发明名称 Secondary electron detecting apparatus
摘要 PCT No. PCT/JP85/00170 Sec. 371 Date Dec. 6, 1985 Sec. 102(e) Date Dec. 6, 1985 PCT Filed Apr. 5, 1985 PCT Pub. No. WO85/04757 PCT Pub. Date Oct. 24, 1985.The present invention relates to an apparatus for detecting the secondary electrons which are obtained from a sample (4) when the sample is irradiated with an electron beam (2). When this electron beam (2) is subjected to a low acceleration voltage, it is desirable to detect the secondary electrons efficiently without interfering with the deflection of the electron beam (2). In order to solve this subject matter, there is used a means (7) for generating an electric field and a magnetic field which are so perpendicular to each other that they apply deflecting forces in the direction common to the secondary electrons while applying no deflecting force to the electron beam as a whole.
申请公布号 US4658136(A) 申请公布日期 1987.04.14
申请号 US19850828309 申请日期 1985.12.06
申请人 HITACHI, LTD. 发明人 OHTAKA, TADASHI;NAKAIZUMI, YASUSHI;KURODA, KATSUHIRO
分类号 G01N23/225;H01J37/244;(IPC1-7):H01J37/244 主分类号 G01N23/225
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