THIN FILM TRANSISTOR

摘要

PURPOSE:To stabilize the characteristics of the titled transistor by a method wherein the transistor possesses a gate insulator layer which comes into closely contact to the semiconductor layer provided with source and drain electrodes, the insulator layer is constituted by superposing the first insulator layer and the second insulator layer and the semiconductor layer and the second insulator layer are brought into contact to each other. CONSTITUTION:A gate electrode 2 consisting of Al is formed on such an insulating substrate 1 as a glass substrate in the prescribed form and thereafter, a fluoride insulator consisting of MgF2 is formed on the insulating substrate 1 including the gate electrode 2 as a first insulator layer 3. A second insulator layer 4 consisting of Al2O3 is formed on the first insulator layer 3. A CdSe layer is formed on the second insulator layer 4 as a semiconductor layer 5 in the prescribed form. Source and drain electrodes 6 and 7 consisting of Al are formed on the region including the semiconductor layer 5 in the prescribed form.