| 摘要 |
PURPOSE:To contrive to improve the operating speed of the information write and readout of a DRAM by reduction in the resistance value of word lines by a method wherein a word line extending in a fixed direction and a stepwise difference present in the MISFET-forming region of a memory cell are put into intersection at a required angle. CONSTITUTION:The MISFET-forming region of the memory cell is provided in the state that a conductive plate 6 is opened so as to expose that section. Thereby, the stepwise difference S having a steep form is present on insulation films 7 and 8 at part of word line formation and on a field insulation film 4 by means of the insulation film 4, conductive plate, etc. The word line 9 is constructed by coating a polycrystalline Si layer 9A with a silicide layer 9B, the compound of a high melting point metal of a lower resistance and silicon. Since the word line and the stepwise difference are in intersection at a required angle, a current route that avoids a higher resistance part than the flat part generating at the stepwise difference, i.e., a current route that does not orthogonally intersect with the end of said stepwise difference, can be provided, and the resistance value of the word line can be reduced. |
