| 摘要 |
PURPOSE:To shorten the manufacturing process of the titled detector as well as to improve the positioning accuracy of the n<+> layers and the electrodes by a method wherein, after the part other than parts of an n-type semiconductor, whereon the electrodes should be formed, is coated with such a shielding film as a resist, the n<+> layers are formed under the parts at which the electrodes should be formed by an ion-implantation and so on and after an electrode material is adhered on the whole surface, the shielding film is removed and the patterns of the electrodes are formed. CONSTITUTION:The pattern of a photo resist 6 is formed on the upper surface of an n-type HgCdTe semiconductor using a mask. This pattern acts as one for forming n<+> layers, and at the same time, as one for forming the patterns of electrodes. Subsequently, an ion-implantation is executed and n<+> layers 2 are formed on parts, whereon the photo resist 6 is not formed, of the n-type HgCdTe semiconductor. An electrode material 3' is evaporated on the photo resist 6, the n<+> layers 2 and over the whole upper surface of a substrate 5. When the photo resist 6 is chemically removed, the electrode material being adhered on the photo resist 6 also is peeled along with the resist and the patterns of electrodes 3 are formed on the n<+> layers 2 and the substrate 5.
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