| 摘要 |
PURPOSE:To grow P-type ZnSe suitable as a blue-color light emitting material by a method wherein the temperature of a P-cell is maintained within the specified range. CONSTITUTION:Each housed material is allowed to fly as a molecular bean from the Zn-containing Zn cell, the Se-containing Se cell and the P-containing P cell, and ZnSe is grown. The ZnSe is grown with the P cell at the temperature range of 150-350 deg.C. When ZnSe is grown in single crystal, a GaAs (100) substrate is maintained at a high temperature before growth of ZnSe, and after the crystal surface has been cleaned, the temperature of said crystal surface is lowered to the temperature at which ZnSe single crystal is epitaxially grown. Then, the cell containing Zn source material is maintained at about 300 deg.C, the cell containing Se source material is maintained at about 210 deg.C, and the cell containing P source material is maintained at 150-350 deg.C. When Zn, Se and P are brought into the state of molecular beam and let them reach the GaAs substrate, the ZnSe can be epitaxially grown on the GaAs substrate. |
