| 摘要 |
PURPOSE:To obtain a photoconductive layer having desired superior characteristics by heat-treating an a(amorphous)-Si layer at a specified temp. and in a specified atmosphere. CONSTITUTION:A manufacturing apparatus comprises a deposition chamber 101 for forming an a-Si layer on a substrate 102, a high frequency power supply 105 for causing discharge in the chamber 101, a material gas feed system 108-124 for feeding material gases for forming the a-Si layer, a heat treatment chamber 127 for heat-treating the formed a-Si layer, a heat treatment atmosphere-forming material gas feed system 129-135 for forming a heat treatment atmosphere in the chamber 127, and an activating means 126 for activating said material gases installed in the feed system 129-135. |
