| 摘要 |
A semiconductor memory device, such as a metal-insulator semiconductor random access memory device, in which erroneous write in which may occur when an input address signal is switched, is prevented. The semiconductor memory device comprises an input/output circuit, having an input circuit portion which receives input data and supplies the input data to a pair of data buses and an output circuit portion which amplifies signals from the pair of data buses and outputs therefrom, and a circuit for detecting a change in input address signal and generating a pulse having a predetermined pulse width when the input address signal changes. The input circuit portion of the input/output circuit operates so as to inhibit the writing in of data during generation of the pulse even if the write-enable signal is supplied to the memory device and operates in accordance with the write-enable signal when the pulse is not generated. |
