发明名称 CHARGE-COUPLED SEMICONDUCTOR DEVICE AND IMAGE SENSOR DEVICE OF HIGH INFORMATION DENSITY
摘要 In a CCD, especially in an image sensing device, the electrodes of the sensor part and the memory part can be switched between a reference level signal and clock pulse signals. As a result, the information density and hence in the image sensor device the number of image lines to be read out independently can be doubled. Thus, the resolution is improved and it is possible to record even and odd lines simultaneously (for example, for an electronic still camera).
申请公布号 DE3462570(D1) 申请公布日期 1987.04.09
申请号 DE19843462570 申请日期 1984.05.29
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 BOUDEWIJNS, ARNOLDUS JOHANNES JULIANA;COLLET, MARNIX GUILLAUME
分类号 H04N5/335;H01L21/339;H01L27/148;H01L29/76;H01L29/762;H01L29/772;H04N3/15;(IPC1-7):H04N3/15;H01L27/14 主分类号 H04N5/335
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