| 摘要 |
<p>A process for producing a silicon dioxide film for use as an insulating film in semiconductor devices, which comprises vaporizing a starting material (11) composed of silicon or silicon oxide in a vacuum vessel (18) in which a gaseous atmosphere mainly comprising oxygen atoms is formed, by heating, then ionizing or exciting the vaporized starting material, and accelerating the ionized material so as to impinge against a base plate (17) for forming a silicon dioxide film on the surface of the base plate (17). The film has a perfect silicon-to-oxygen atom ratio and a complete binding state therebetween, has no pinholes, and is highly dense.</p> |
