| 摘要 |
PURPOSE:To improve stability and reliability, and to increase the speed of response by forming a metal (M)-an insulator (I)-a semiconductor (S) junction, controlling the redox of the surface of the semiconductor by applying external voltage and coloring and decoloring the semiconductor. CONSTITUTION:Coloring and decoloring are conducted by utilizing the redox of the surface of a semiconductor with a mass transfer by using MIS structure. A level 1 formed in the semiconductor represents the impurity level of the semiconductor or an interface level, the level 1 is emptied under the state of (a), the state of a junction changes as shown in (b) when voltage is applied so that the semiconductor side is brought to a positive value and the metallic side to a negative value from the outside, and the surface of the semiconductor is reduced and the level 1 shown in a forbidden band is filled with electrons. When the level 1 is shaped by an impurity, such as Cr<3+>, V<4+>, etc., the surface of the semiconductor is colored by light absorption by a transition in the d shell of the impurity and an electron transition to a conduction band. An LB film is optimum as an insulator film used. |
