Radiation hard memory cell.

摘要

Pairs of cross-coupled transistors (T1 + T2, T3 + T4) are configured as a bistable regenerative circuit. Isolation means, such as diodes (I1 to I4), are provided in the cross-coupling paths to ensure that if the logic state of one transistor is temporarily changed by radiation striking the circuit, the logic state of the other transistor it is paired with will not change and the logic state of the unchanged transistor will be utilized to maintain the logic state of the other pair of transisfors. DTL and SDFL circuits are disclosed as the preferred embodiments.