| 摘要 |
<p>Semiconductor circuit device comprising: a first MESFET (9) having its drain connected to a first potential (VDD) through a load (8), its gate receiving an input signal and its source connected to a second potential; a second MESFET (10) having its drain connected to the first potential (VDD), its gate connected to the drain of the first MESFET (9); a third MESFET (12) having its drain connected to the source of the second MESFET (10), both its gate and source connected to a third potential (VCS); and a Schottky barrier diode (11) having its cathode connected to the gate of the second MESFET (10), and its anode connected to the junction of the second and third MESFETs (10,12). </p> |
