| 摘要 |
PURPOSE:To provide a light emitting element, which has a high light output and excellent directivity and is useful for optical fiber and the like, by forming a P-N junction at a protruded part on the main surface of a one-conductivity type semiconductor substrate, and forming a metal film, which is to become a reflecting plate on a slant surface surrounding the P-N junction. CONSTITUTION:Impurities are selectively added in a part of the main surface of an N-type compound semiconductor substrate, and a P-type layer 12 is formed. A part of the main surface of the substrate 11 is selectively etched, and a protruded part, on which a P-N junction is formed, and a slant surface surrounding the protruded part are formed. Then, an Au film 12 is evaporated on entire both surfaces of the substrate 11. Thereafter, a part of the Au film 21 on the main surface of the substrate 11 is selectively etched with potassium cyanide, and a reflecting plate 13 and a P-type electrode 15 are formed. The Au film remaining on the back surface of the substrate 11 becomes an N-type electrode 14. Then, dicing is performed, and a light emitting element is manufactured. |
