| 摘要 |
<p>PURPOSE:To form a sense amplifier circuit having high operating margins by providing plural dummy cell circuits in parallel with a reference potential generating circuit generating a comparison reference potential and providing a write means for writing a required electrically on at least any of the dummy memory cells. CONSTITUTION:Two dummy memory cells QD1, QD2 are provided to a reference potential generating circuit E, a path transistor (TR) QND3 is connected in series with the dummy memory cell QD1 and a path TR QND4 is connected in series with the other dummy memory cell QD2, and the two dummy cell circuits 1a, 1b constituted above are provided in parallel. A path TR QW2 is turned on by applying a high voltage Vpp to a control signal line DPGM connected to its gate to apply a required voltage to the dummy cell circuits 1a, 1b. The electric write means on the dummy memory cells QD1, QD2 is constituted by the path TR QW2.</p> |
