| 摘要 |
<p>PURPOSE:To extend a depletion layer in a P-N junction section largely in the lateral direction, and to maintain the withstanding voltage of the P-N junction section at a high value by the potential of an independent chip or electrode oppositely faced to the P-N junction section by forming a guard ring in double structure. CONSTITUTION:A semiconductor device has an oxide film 24 coating the surface of a semiconductor reaching the end section of a second semiconductor region from a first semiconductor region, a first electrode arranged onto the first semiconductor region through the oxide film 24 and a second electrode disposed brought into contact directly onto the second semiconductor region. The semiconductor device is constituted of a first guard ring 28, which is extended from the second electrode and disposed onto the first semiconductor region through the oxide film, and a second guard ring 32, which is extended from the second electrode, passes between the first electrode and the first guard ring 28, is partitioned and formed along the periphery of the first guard ring 28 and is arranged onto the first semiconductor region through the oxide film 24.</p> |
