| 摘要 |
PURPOSE:To facilitate production and to scale down a detector by overlapping unit bodies so that each scintillator on the back of one unit body can coincide with each photodetecting element of the next unit body and making a radial ray X to be detected incident. CONSTITUTION:A Si3N4 film 7 is formed by means of CVD technique, etc., on both surfaces of a silicon wafer forming a photodiode 2. Then the Si3N4 film in a groove is removed by lithographic technique so that a groove can be formed on the back of the wafer 1 (surface where no photodiode is formed), and aisotropic etching is executed with an etching solution such as KOH and APW, whereby the groove 3 is formed on a part equivalent to the back of each photodiode 2 on the surface of the silicon wafer. Then the Si3 N4 film is removed, the silicon wafer 1 is cut into the unit body, and a scintillation substance 4 is packed in the groove 3. After the scintillation substance 4 is packed, the unit body U is completed, and four unit bodies adhere to complete one block.
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