| 摘要 |
PURPOSE:To ion implant with low energy from above a gate by implanting nitrogen ions from at least a gate electrode of an MIS semiconductor device to a channel. CONSTITUTION:Nitrogen ions are implanted with accelerating energy of 240keV through a gate electrode to the channel of MISFET. The nitrogen ions can be implanted deeper position with low accelerating energy as compared with phosphorus ions. Accordingly, the writing of ROM data by ion implanting is facilitated with lower energy than the case of using phosphorus ions. |
