A method for laser crystallization of semiconductor islands on transparent substrates.

摘要

A method for laser crystallization of semiconductor islands (l0) on a transparent substrate (l2) in which a portion of the surface of the semiconductor islands (l0) along the edges (l6 and l8) are covered with a layer (l4) of transparent material. The thickness of the transparent layer (l4) being selected to enhance the absorption of the laser energy by the semiconductor material at the edges (l6 and l8) of the islands (l0) compensating for edge losses and increasing the uniformity of the crystallization.