| 摘要 |
PURPOSE:To suppress the consumptive deterioration of a semiconductor due to corrosion and cause a high photovoltaic force, by conjoining a granular or linear boundary electron transfer medium substance to the light incidence surface of a semiconductor. CONSTITUTION:A granular or linear boundary electron transfer medium substance 1b is conjoined to the light incidence surface of a semiconductor 1a so that a liquid is passed through the substance 1b between the semiconductor and light-permeable electroconductive substance 8 which is an electrolyte solution, for example. The boundary electron transfer medium substance 1b such as platinum and palladium, which is conjoined to the light incidence surface of the semiconductor 1a, is provided as grains of about 10nm in diameter or a wire of about 10nm in width, for example, to heighten the potential barrier to a semiconductor-solution junction. Since the speed of reaction is increased by catalytic activity, a high photovoltaic force is caused. |
