| 摘要 |
PURPOSE:To obtain excellent light frequency characteristics by integrating a double gate FET and a peripheral circuit network on an Si substrate to be sealed in a package, and disposing the connecting terminal of an external bypass capacity and the ground terminal of the package adjacently to simplify a mounting circuit. CONSTITUTION:An FET1 having gates G1, G2 and P<+>-N diodes 3, 4 by Zn implanting are connected oppositely in reverse direction on a GaAs substrate, a resistance layer R is formed by altering dosage, layed out as predetermined, and external terminals 11-16 are attached. A package having 2-terminals 12, 14 opposed to a normal high frequency FET plastic package is prepared. Pin disposition employs gates G1, G2, drain D terminal 15, 16, 13 as conventional one, the position 11 of a conventional source S is used as a ground terminal, and source S terminal 12 is assigned adjacently. Since the ground and the source terminal are disposed adjacently, a bypass capacity can be readily mounted and a ground resistance can be reduced. According to this configuration, a semiconductor device having excellent high frequency characteristics can be obtained readily with good reproducibility. |
