| 摘要 |
PURPOSE:To obtain the titled device having less deterioration in an image by arranging photosensitive picture element units for storing a signal generated by an incident light on a semiconductor substrate and vertical shift registers disposed therebetween for separately transferring smear charge in a matrix state, and discharging the transferred smear charge by the register. CONSTITUTION:Photosensitive picture element units 2 for storing signal charge generated by incident light on an Si substrate 1 are formed in a matrix state, and vertical shift registers 3 for separately transferring smear charge stored in the units 2 are provided thereamong, and sequentially selected by an address circuit 4. Transfer electrodes 5, 6 having gate 14 and drain 15, a storage unit 7, a transfer electrode 8 are provided in parallel, terminals 16-20 are attached thereto, horizontal shaft registers 11 having output terminals 25 are arranged thereunder, smear charge from the register 3 is discharged from the terminal 16 through the drain 15 and the gate 14. |
