PROCEDIMENTO PER PRODURRE MATERIALE SEMICONDUTTORE MOLTO DROGATO,申请号IT19830022636-传众专利搜索

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发明名称	PROCEDIMENTO PER PRODURRE MATERIALE SEMICONDUTTORE MOLTO DROGATO
摘要
申请公布号	IT1163932(B)	申请公布日期	1987.04.08
申请号	IT19830022636	申请日期	1983.08.25
申请人	SIEMENS AG	发明人	REUSHEL KONRAD
分类号	C30B29/06;C30B15/04;C30B31/06;H01L31/10;(IPC1-7):C30B/	主分类号	C30B29/06
代理机构		代理人
主权项
地址

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