发明名称 |
Electrically erasable programmable RAM |
摘要 |
In a semiconductor memory made up of semiconductor memory elements, each consisting of a transistor of an MOS structure which has a charge-storage layer and which is formed on a semiconductor substrate, the improvement wherein a switching element is provided so that positive or negative charge can be stored or discharged from the charge-storage layer in a mode for writing data, and the charge-storage layer can be allowed to float electrically when in a mode for reading data.
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申请公布号 |
US4656607(A) |
申请公布日期 |
1987.04.07 |
申请号 |
US19840632317 |
申请日期 |
1984.07.19 |
申请人 |
HITACHI, LTD. |
发明人 |
HAGIWARA, TAKAAKI;KAGA, TORU;MASUDA, HIROO |
分类号 |
H01L27/112;G11C11/40;G11C11/404;G11C14/00;G11C16/04;H01L21/8246;H01L21/8247;H01L27/10;H01L29/788;H01L29/792;(IPC1-7):G11C11/40 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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