发明名称 |
Trench isolation structures |
摘要 |
A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.
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申请公布号 |
US4656497(A) |
申请公布日期 |
1987.04.07 |
申请号 |
US19850783717 |
申请日期 |
1985.10.03 |
申请人 |
NCR CORPORATION |
发明人 |
ROGERS, STEVEN H.;MUNDT, RANDALL S.;KAYA, DENISE A. |
分类号 |
H01L21/762;(IPC1-7):H01L27/04;H01L29/04;H01L29/34;H01L29/78 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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