| 摘要 |
PURPOSE:To provide high sensitivity, high dark resistance and excellent electrophotographic characteristics by forming a coating layer contg. at least carbon or nitrogen by a gaseous phase reaction method without oxidizing the inside layer of amorphous silicon thereby obtaining amorphous silicon particles. CONSTITUTION:The inside layers 1 of the amorphous silicon particles are formed by glow discharge of gaseous SiH4 in a reaction chamber 3. The inside layers 1 of the formed amorphous silicon particles accumulated into a reservoir part 13 in the lower part of the reaction chamber 3 are introduced into the reaction chamber 4 by first maintaining a vacuum state in the reaction chambers 3 and 4 and opening a gate value 5, then maintaining the vacuum state in the reaction chamber 4, by which the coating layer is formed. The film constituting the coating layer is the carbon film or the amorphous silicon film contg. carbon and/or nitrogen. The resultant amorphous silicon particles are dispersed into a soln. prepd. by dissolving a binder resin and coating the same on a conductive base, then drying the coating. The amt. of the amorphous silicon particles is 0.4-1.5pts.wt. by 1pt.wt. resin. |
