发明名称 Double level metal edge seal for a semiconductor device
摘要 A three part edge seal for an integrated circuit semiconductor chip is disclosed. The edge seal includes two separate layers of metal one of which overlays the other in electrical contact. One of the metal layers is in ohmic contact with a highly doped region formed in the planar surface of the semiconductor body. The two metal layers serve as an electrical conductor to distribute power to various portions of the integrated circuit contained in the chip and electrically charge the highly doped region to prevent migration of ions into the active areas of the integrated circuits.
申请公布号 US4656055(A) 申请公布日期 1987.04.07
申请号 US19860854692 申请日期 1986.04.18
申请人 RCA CORPORATION 发明人 DWYER, ROBERT A.
分类号 H01L23/485;H01L23/528;(IPC1-7):H01L21/88 主分类号 H01L23/485
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