| 摘要 |
PURPOSE:To prevent short circuits in an MOS-type capacitor by a method wherein a semiconductor oxide film partially buried in a semiconductor is placed between an insulating film constituting a capacitor dielectric member and a lead- out electrode. CONSTITUTION:A densely doped P type or N type semiconductor layer 3 is provided on a semiconductor substrate 7, which in turn is covered by a nitride film. The nitride film is then subjected to selective etching. A first selective oxidation is effected for the formation of Si oxide layers 1, 10 half buried in the semiconductor. The nitride film 6-1 is subjected to etching, and then a polycrystalline Si layer 11 and a nitride film are grown. This nitride film is subjected to selective etching and then to a second selective oxidation for the formation of oxide films 2-1, 2-2. The nitride films 12-1, 12-2 are subjected to etching, whereafter a metal film is formed. The remaining crystalline Si joins the metal to form a metal silicide in a heat treatment and forms one of the MOS capacitor electrodes 5 and a lead-out electrode 4. |
