PRODUCTION OF PHOTOCONDUCTOR

摘要

PURPOSE:To produce a photoconductor having satisfactory electrostatic charging potential and charge retentivity by forming an amorphous Si film on a substrate by vapor growth by CVD or PVD, cooling the film once to ordinary temp. and heat treating it under specified conditions. CONSTITUTION:A photoconductive amorphous Si film 2 is formed on a substrate 1 of Al or the like by vapor growth by CVD or PVD. The film 2 is cooled once to ordinary temp. and heat treated at 50-250 deg.C for 30min-12hr to increase the dark resistance. Thus, a photoconductor having satisfactory electrostatic charging potential and charger retentivity is obtd. An underlayer 3 and a protective layer 4 may be formed under and on the photoconductive amorphous Si film 2.