| 摘要 |
PURPOSE:To inhibit a blooming, and to prevent the reduction of sensitivity and a dynamic range by forming a vertical type field-effect transistor using a photoelectric conversion section as a source, a substrate as a drain and an electrode in a groove as a gate. CONSTITUTION:When voltage is applied previously to a polycrystalline silicon electrode 23 buried into a groove 22 so that the channel potential 26 of a vertical type transistor employing a drain and an N-type region 11 in a photodiode as sources is made slightly higher than channel potential 27 just under a transfer gate electrode 14 on OFF of the transfer gate electrode 14, the potential of the N-type region 11 in the photodiode is not made smaller than the channel potential 26 of the vertical type field-effect transistor. That is, excess charges generated near the photodiode as a photoelectric conversion section can be swept out completely to a substrate 20 through the vertical type field-effect transistor. Accordingly, a blooming can be prevented without reducing sensitivity and minimizing a dynamic range. |
