发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To reduce the effect of the propagation delay of a dummy sense amplifier output signal by setting the bit potential discriminating level of a dummy sense amplifier in a dummy sense amplifier circuit at a value different from that of the sense amplifier in a main body. CONSTITUTION:When the potential level of a bit line is varied from the inverse of VSS side, the sense level of the dummy sense amplifier is made approach to a VSS side nearer than a main body side by making the capacity of a dummy sense amplifier Nch transistor larger than that of the main body side, and the effect of the propagation delay is reduced by making the inverting time of the dummy sense amplifier faster by the propagation delay share of the signal than that of the main body, preventing a malfunction. When the potential of the bit line approaches from a +VDD side, the same effect can be obtained by making small the capacity of the Nch transistor or making larger that of a Pch transistor.</p>
申请公布号 JPS6273496(A) 申请公布日期 1987.04.04
申请号 JP19850211606 申请日期 1985.09.25
申请人 SEIKO EPSON CORP 发明人 KATSUNO KUNIO;TSUJI MASUO;YOSHIZAWA MASAYUKI
分类号 G11C17/18;G11C17/00 主分类号 G11C17/18
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