发明名称 BISTABLE SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain a stable switching function or memory function by forming two laser oscillation regions, the phase of diffraction gratings thereof are displaced to each other, in the direction of an optical waveguide on adjacent boundary sections in diffraction gratings for each region. CONSTITUTION:Two laser oscillation regions in which phase among diffraction gratings 21-23 is inverted and phase is displaced are shaped, an active layer 3 is formed, and electrodes 41-43 are shaped in order to change over two laser oscillation modes of an A-B mode and a B-C mode. When currents are injected from the electrode 43 at a right end under the state in which oscillation is conducted at the A-B mode, currents are injected by the central electrode 42 and oscillation is continued, oscillation is changed over to the oscillation of the B-C mode centering around a phase difference section C2, and the oscillation of the B-C mode is continued by the injection of currents by the central electrode 42 even when the injection of currents from the electrode 43 is stopped. When currents are injected from the electrode 41 during the oscillation of the B-C mode, the B-C mode is changed over to the A-B mode. Accordingly, a bistable switching element and memory element having high reliability are acquired.
申请公布号 JPS6273689(A) 申请公布日期 1987.04.04
申请号 JP19850213241 申请日期 1985.09.26
申请人 FUJITSU LTD 发明人 SHIRASAKI MASATAKA
分类号 H01S5/00;H01S5/042;H01S5/0625;H01S5/12 主分类号 H01S5/00
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