USE OF AN INSULATING LAYER TO PREVENT ELECTRICAL SHORTAGE THROUGH A SEMICONDUCTOR LAYER

摘要

An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.