发明名称 OPTICAL INTEGRATED CIRCUIT ELEMENT
摘要 PURPOSE:To facilitate the isolation and formation of integrated circuit elements by a method wherein waveguides are built of dielectric laminate film structures of SiO2, SiN, AlN, and Al2O3. CONSTITUTION:Waveguides 24-26 are built of dielectric substances. Waveguides 24 and 26 are clad layers formed of silicon oxide film (SiO2) and a waveguide 25 is a light-confining layer formed of silicon nitride film (Si3N4). Optical signals 100 entering the waveguides 24-26 are confined in the Si3N4 layer 25 equipped with a high refractive index before their are allowed to propagate. They enter photodiodes 27 and 28 to be converted into photoelectric currents, creating a voltage across the tow ends of a resistance layer 23. This results in changes in the voltage applied to a gate electrode 30 and in source.drain currents. Use of a dielectric laminate for a waveguide facilitates its forming. Insulation against photodiodes does not pose a problem any longer. These features all justify the use of this structure for the enhancement of circuit integration density.
申请公布号 JPS6272160(A) 申请公布日期 1987.04.02
申请号 JP19850212903 申请日期 1985.09.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NISHII KATSUNORI;OGURA MOTOTSUGU;UENOYAMA TAKESHI;UNO TOMOAKI;KIMURA SOICHI;SAKATA FUSAKO
分类号 H01L27/14;H01L27/144;H01L31/10;H04B10/00;H04B10/40;H04B10/50;H04B10/60 主分类号 H01L27/14
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