发明名称 |
OPTICAL INTEGRATED CIRCUIT ELEMENT |
摘要 |
PURPOSE:To facilitate the isolation and formation of integrated circuit elements by a method wherein waveguides are built of dielectric laminate film structures of SiO2, SiN, AlN, and Al2O3. CONSTITUTION:Waveguides 24-26 are built of dielectric substances. Waveguides 24 and 26 are clad layers formed of silicon oxide film (SiO2) and a waveguide 25 is a light-confining layer formed of silicon nitride film (Si3N4). Optical signals 100 entering the waveguides 24-26 are confined in the Si3N4 layer 25 equipped with a high refractive index before their are allowed to propagate. They enter photodiodes 27 and 28 to be converted into photoelectric currents, creating a voltage across the tow ends of a resistance layer 23. This results in changes in the voltage applied to a gate electrode 30 and in source.drain currents. Use of a dielectric laminate for a waveguide facilitates its forming. Insulation against photodiodes does not pose a problem any longer. These features all justify the use of this structure for the enhancement of circuit integration density. |
申请公布号 |
JPS6272160(A) |
申请公布日期 |
1987.04.02 |
申请号 |
JP19850212903 |
申请日期 |
1985.09.26 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NISHII KATSUNORI;OGURA MOTOTSUGU;UENOYAMA TAKESHI;UNO TOMOAKI;KIMURA SOICHI;SAKATA FUSAKO |
分类号 |
H01L27/14;H01L27/144;H01L31/10;H04B10/00;H04B10/40;H04B10/50;H04B10/60 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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