| 摘要 |
PURPOSE:To facilitate formation of a photoconductive film with high filling factor at a low temperature without employing a hot-press method or the like by pulverizing annealed power of photoconductive material so as to have an average particle diameter of 1.1mum or smaller. CONSTITUTION:After CdCl2 of 250ppm is mixed with CdSe raw powder synthe sized by a chemical deposition method, the mixed raw powder is annealed in an N2 gas atmosphere and activated. The CdSe annealed powder is pulverized and dispersed by a sand grinder so as to control the minimum diameter, the maximum diameter and the average diameter of the particle of the CdSe annealed powder to be 0.001mum, 1.5mum and 1.1mum respectively. The CdSe annealed powder, CdCl2, glass binder and dispersant are dispersed by organic solvent to make a paste. After the paste is sufficiently kneaded, the paste film is applied to a glass substrate by screen printing. The paste film thus obtained is subjected to a heat treatment in an atmosphere of mixed gas of CdCl2 vapor, N2 and O2 to form a photoconductive film. |
