发明名称 |
AN ELECTRON EMISSIVE MASK FOR AN ELECTRON BEAM IMAGE PROJECTOR, ITS MANUFACTURE, AND THE MANUFACTURE OF A SOLID STATE DEVICE USING SUCH A MASK |
摘要 |
The mask part 41 includes a substrate 1, a patterning means 40 and a photoemissive layer 6. The patterning means 40 includes a mask pattern 2, 3 of apertures 3 and masking areas 2 and a modifying layer 4. Ultraviolet radiation 56 is patterned by patterning means 40 before effecting electron emission 60 from the photoemissive layer 6. There is electron emission from over the apertures 3 and the masking areas 2 as the masking areas are partially transparent to incident ultraviolet radiation. The ultraviolet transmitted by the apertures and the masking areas is modified in intensity dependent on the thickness R of the modifying layer. The resuting electron emission 60 is in a patterned beam which forms a proximity effect corrected electron image of the mask pattern in the electron sensitive resist layer 63. The masking areas 2 of chromium and the modifying layer 4 of resist may be made by modifications of known methods of chromium deposition and resist exposure and development. The use of the mask in the manufacture of a solid state device allows a single exposure of a resist layer 63 to form a proximity effect corrected image of the mask pattern 2, 3 in the resist layer 63. |
申请公布号 |
GB2180669(A) |
申请公布日期 |
1987.04.01 |
申请号 |
GB19850023298 |
申请日期 |
1985.09.20 |
申请人 |
* PHILLIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED |
发明人 |
KEITH HARLOW * NICHOLAS |
分类号 |
H01L21/027;G03F1/00;H01J37/073;H01J37/317 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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