发明名称 |
Semiconductor photo-detector having a two-stepped impurity profile. |
摘要 |
<p>A semiconductor photo-detector having a two-stepped impurity profile comprises a semiconductor substrate (10), a light absorption layer (14) of a first conductivity type formed on a semiconductor substrate, a multiplication layer (18) of a first conductivity type formed on the light dbsorption layer to multiply a photocurrent, a semiconductor region (22) of a second conductivity type formed on the multiplication layer and constituting an abrupt pn junction with the multiplication layer, and a guard ring area (38) of a second conductivity type formed around a periphery of the semiconductor region, whereby the carrier concentration profile of the guard ring region is sharp at its surface and flat below that surface.</p> |
申请公布号 |
EP0216572(A2) |
申请公布日期 |
1987.04.01 |
申请号 |
EP19860306984 |
申请日期 |
1986.09.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KURODA, FUMIHIKO C/O PATENT DIVISION;SADAMASA, TETSUO C/O PATENT DIVISION;SUZUKI, NOBUO C/O PATENT DIVISION;NAKAMURA, MASARU C/O PATENT DIVISION |
分类号 |
H01L21/265;H01L31/105;H01L31/107 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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