发明名称 |
METHOD OF FORMING CIRCUIT COMPONENTS WITHIN A SUBSTRATE |
摘要 |
Disclosed is a method of etching a cavity in a semiconductor body and redepositing semiconductor material in the cavity formed thereby such that a uniform cavity is formed thereby allowing a uniform fill of semiconductor material resulting in a planar surface by use of a semiconductor body with a crystal orientation other than (111). Also is disclosed the structure formed by the method.
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申请公布号 |
US3793712(A) |
申请公布日期 |
1974.02.26 |
申请号 |
USD3793712 |
申请日期 |
1965.02.26 |
申请人 |
TEXAS INSTRUMENTS INC,US |
发明人 |
BEAN K,US;GLEIM P,US |
分类号 |
H01L21/00;H01L21/205;H01L21/762;(IPC1-7):01J17/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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