发明名称 METHOD OF FORMING CIRCUIT COMPONENTS WITHIN A SUBSTRATE
摘要 Disclosed is a method of etching a cavity in a semiconductor body and redepositing semiconductor material in the cavity formed thereby such that a uniform cavity is formed thereby allowing a uniform fill of semiconductor material resulting in a planar surface by use of a semiconductor body with a crystal orientation other than (111). Also is disclosed the structure formed by the method.
申请公布号 US3793712(A) 申请公布日期 1974.02.26
申请号 USD3793712 申请日期 1965.02.26
申请人 TEXAS INSTRUMENTS INC,US 发明人 BEAN K,US;GLEIM P,US
分类号 H01L21/00;H01L21/205;H01L21/762;(IPC1-7):01J17/00 主分类号 H01L21/00
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