发明名称 |
STRUCTURE AND METHOD FOR MANUFACTURING FOR THIN FILM FIELD EFFECT TRANSISTOR MATRIX ADDRESS TYPE LIQUID CRYSTAL DISPLAYUNIT |
摘要 |
<p>A thin film FET switching element, particularly useful in liquid crystal displays, employs a set of special materials to ensure compatibility with the indium tin oxide of a pixel electrode layer used as transparent conductive material in liquid crystal display devices. These materials include the use of titanium as a gate electrode material and the use of aluminum as a material to enhance electrical contact between source and drain pads and an underlying layer of amorphous silicon. The apparatus and process of the present invention provide enhanced fabrication yield and device reliability.</p> |
申请公布号 |
JPS6270817(A) |
申请公布日期 |
1987.04.01 |
申请号 |
JP19860180271 |
申请日期 |
1986.08.01 |
申请人 |
GENERAL ELECTRIC CO <GE> |
发明人 |
HARORUDO JIYOOJI PAAKUSU;UIRIAMU UEIDOMAN PAIPAA;JIYOOJI EDOWAADO POTSUSHIN;DONARUDO AARU KIYATSUSURUBERII |
分类号 |
H01L29/78;G02F1/136;G02F1/1368;H01L21/28;H01L21/285;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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