Antiblooming image sensor device

摘要

An image sensor device comprising a semiconductor substrate having a number of surface-adjoining channel regions. The channel regions are separated from each other by surface-adjoining channel separation zones. The channel regions further adjoin an underlying semiconductor zone extending substantially parallel to the surface. The channel regions have doping concentrations which exceed that of the semiconductor zone. The semiconductor zone has a dopant concentration which exceeds the dopant concentration of the semiconductor substrate. The semiconductor zone has a varying thickness which has minima at the areas of the centers of the channel regions. In such an image sensor device, a potential distribution can be obtained which strongly suppresses blooming. The invention also relates to a method of manufacturing this image sensor device.