发明名称 |
Method for making submicron mask openings using sidewall and lift-off techniques |
摘要 |
A method is disclosed for making submicron openings in a substrate. A mesa is formed on the substrate by reactive ion etching techniques. A film is deposited over the entire structure and the mesa is selectively etched away to yield a submicron-sized opening in the film. Using the film as a mask, the substrate exposed thereby is reactively ion etched. An example is given for producing an emitter mask for a polycrystalline silicon base bipolar transistor.
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申请公布号 |
US4654119(A) |
申请公布日期 |
1987.03.31 |
申请号 |
US19850799053 |
申请日期 |
1985.11.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOK, ROBERT K.;SHEPARD, JOSEPH F. |
分类号 |
H01L21/302;H01L21/033;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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