发明名称 High speed concurrent testing of dynamic read/write memory array
摘要 A semiconductor read/write memory device has a normal mode of operation and a test mode. The test mode allows concurrent writing to a number of cells in the cell array so that test patterns may be rapidly loaded. The cell array is split into subarrays and the column addressing circuitry is arranged to provide a maximum of spacing between the cells that are concurrently written. In this manner, pattern sensitivity tests may be run at higher speed because a number of bits at widely spaced positions in the array can be tested simultaneously.
申请公布号 US4654849(A) 申请公布日期 1987.03.31
申请号 US19840646656 申请日期 1984.08.31
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 WHITE, JR., LIONEL S.;NEAL, JOSEPH H.;TRAN, BAO G.
分类号 G11C29/26;(IPC1-7):G06F11/22;G11C29/00 主分类号 G11C29/26
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