| 摘要 |
The disclosure relates to a photodetector, primarily for use in the infrared range, wherein a portion of the metal layer forming the gate is eliminated, resulting in no metal absorption loss and no differential tunnel breakdown. The system operates by establishing a fixed charge density at the semiconductor-insulator interface to create near flat band voltage in the open or hole area. No potential well is formed under the hole in the gate to collect charge so the metal gate formed around the hole controls the surface potential. Carriers generated in the hole area diffuse and drift to the potential wells created beneath the thick metal gate which surrounds the hole.
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