| 摘要 |
<p>PURPOSE:To convert Ta in produced pin-hole parts into TaO and avoid layer short circuit by repeating anode oxidization after the processes such as matching of amorphous Si or formation of contact holes. CONSTITUTION:Ta 12 is deposited on a glass substrate 11 and its surface is subjected to anode oxidization 13 to form an address line 12. Then, after SiO2 14, amorphous Si 15 and N<+> type amorphous Si 16 are deposited by plasma CVD, Mo 17 is deposited on them and an island 15 of amorphous Si is formed by patterning. Then anode oxidization is carried out to convert Ta in pin-hole 20 parts into anode oxide films 20a and 20b and a picture element electrode 17 is formed by sputtering and patterning ITO. After that, anode oxidization is carried out and Al is evaporated to form source, drain and data lines 18. By carrying out anode oxidization after the processing as described above, layer short circuit between the data line and the address line is almost completely eliminated.</p> |
