| 摘要 |
PURPOSE:To avoid unevenness of a recrystallized semiconductor film created by beam annealing when a backward stagger type TFT is formed by carrying out the beam annealing before a gate electrode (the first conductive film) is patterned. CONSTITUTION:After a laminated film 10, consisting of the first conductive film 2, a gate insulating film 3 and an Si thin film 4, is deposited on an insulating substrate 1, the Si thin film 4 is subjected to beam annealing to form a recrystallized Si film 14. Then the laminated film 10, consisting of the recrystallized Si film 14, the gate insulating film 3 and the first conductive film 2, is selectively etched so as to have the shape of a gate electrode to form an island shape laminated film 20. After that, a field insulating film 7 is deposited and an aperture is formed in the field insulating film 7 above the island shape laminated film 10 and, after an N<+> type Si film 5 and a metal film 6, which compose the second conductive film 50, are deposited, a source electrode 16 and a drain electrode 26 are composed of the metal film 6 and a source region 15 and a drain region 25 are composed of the N<+> type Si film 5 by selective etching. With this constitution, a backward stagger type TFT with a semiconductor thin film subjected to beam annealing can be easily obtained. |
