| 摘要 |
<p>PURPOSE:To prevent the formation of fine foreign matters due to inverse mesa part and the defects in circuit element, wiring, etc. due to the fine foreign matters by a method wherein, when a compound semiconductor wafer is wet- etched, the sectional inverse mesa part is blocked. CONSTITUTION:A semiconductor pellet 2 is composed of a substrate (GaAs substrate) of gallium, arsenic single crystal while a blockade part 9 composed of tungsten silicide (WSi) to block an etching process is formed in an inverse mesa type etching part 8 formed perpendicular to the (011') surface of GaAs substrate. The semiconductor pellet 2 is provided with the main surface (100) perpendicular to drawing space where active areas and electrodes etc. are to be formed. The peripheral part of semiconductor pellet 2 are formed by scribing a wafer. In other words, the etching part 8 as a scribe line in the wafer stage can be formed by wet-etching the 100 surface of GaAs.</p> |
