发明名称 PHOTOMASK
摘要 PURPOSE:To prevent the excessive close contact of a wafer and to make the separativity from a resist film excellent by forming a double resin film made of a PVA film and a silicone resin film on a photomask surface. CONSTITUTION:The PVA film 2 is applied to a photomask substrate 1, and formed by curling in a parabolic direction in a drying step owing to its inherent feature. The silicone resin film 3 is applied and formed on the PVA film 2. When a photomask circuit pattern is transferred on a wafer, the photomask is brought into contact with the wafer. Since the photomask surface curls due to the action of the PVA film 2 at this time, its excessive close adhesion to the wafer surface can be prevented. As the silicone resin film 3 excellent in separativity from the resist film directly touches the wafer instead of the PVA film 2, the peel-off of the resist film can be effectively prevented when the photomask is separated from the wafer.
申请公布号 JPS6267548(A) 申请公布日期 1987.03.27
申请号 JP19850208234 申请日期 1985.09.20
申请人 FUJITSU LTD 发明人 SHIRAI HISATSUGU;BUNGO KEIICHI
分类号 G03F1/00;G03F1/48;H01L21/027 主分类号 G03F1/00
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