PROCEDE DE FABRICATION D'UN SUBSTRAT SEMI- ISOLANT EN MATERIAU III-V NON DISLOQUE ET STABLE THERMIQUEMENT

摘要

The process according to the invention comprises the drawing of an AB single crystal from a corresponding melt bath, A and B representing respectively an element of III-V columns of the periodic classification, doping said bath by means of ions of a transition metal used to compensate the residual impurities of the substrate, the concentration of said ions in the AB substrate being at the most equal to the solubility limit of said ions at the annealing temperature of said substrate, as well as the doping of the bath by means of ions of an element of III or V column different from A and from B. The substrate obtained may be used for fabricating logic integrated circuits.