| 摘要 |
PURPOSE:To operate a PIN diode on a low voltage by Schottky-bonding of the second semiconductor layer of the diode to an anode electrode. CONSTITUTION:P is thermally diffused in both side surfaces of an N<-> type semiconductor substrate (second semiconductor layer) 2 to form an N<+> type semiconductor layer 3 is formed in the substrate 2, and one side of the substrate 2 is mirror-polished to remove the semiconductor layer 3. Then, a PIN diode is composed of a ring-shaped P-type diffused layer 5 formed by a thermal diffusing method with the layers 3, 2 and an Si oxide film 4 formed thereon as masks, an N<+> type diffused layer 6 formed by a thermal diffusing method with the film 4 around the layer 2 a mask, a deposited Ti-Pt-Au electrode 8 Schottky- bonded to the layer 2 over the films 4 and a hole 7 opened to expose the part of the layer 5 and the layer 2 surrounded by the layer 5, and a cathode electrode 10 formed on the layer 3. |
