| 摘要 |
<p>PURPOSE:To apply capacitor function by composing a part of a gate electrode of a thin film transistor of a polycrystalline Si of 500Angstrom or smaller when disposing the transistors in a matrix state on a transparent substrate, and superposing through an insulating film on the drain electrode of the adjacent transistor. CONSTITUTION:A polycrystalline Si island 2 is formed on a transparent substrate 1, the exposed surface of the island 2 is surrounded by an oxide film 3 formed by oxidizing the surface, and surrounded by the gate electrode 4 of polycrystalline Si film. Then, source and drain regions, not shown, are diffused in the vicinity, an interlayer insulating film 5 is coated on the entire surface which includes the regions, and a drain electrode 6 is formed on the film 5. In this configuration, one end of the electrode 4 of adjacent thin film transistor of the electrodes 4 is disposed under the previous electrode 4 while forming the thickness 500Angstrom or smaller, and a capacitor capacity is provided therebetween. Thus, charge retaining characteristic when using for driving a liquid crystal can be improved.</p> |
