| 发明名称 |
Semiconductor diode having a p-n junction and little or no diffusion voltage |
| 摘要 |
The semiconductor diode which has a p-n junction and a very low or no diffusion voltage, such as that described in the introduction and in the patent claims, is capable of rectifying electrical signals with low voltages down to less than 50 mV and, because of the diffusion capacitance, which tends to zero, is able to do this from low to high frequencies.
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| 申请公布号 |
DE3631641(A1) |
申请公布日期 |
1987.03.26 |
| 申请号 |
DE19863631641 |
申请日期 |
1986.09.17 |
| 申请人 |
DEHMELT,FRIEDRICH WILHELM,PROF.DR.-ING. |
发明人 |
WILHELM,PROF.DR.-ING. DEHMELT,FRIEDRICH |
| 分类号 |
H01L29/165;H01L29/36;H01L29/861;(IPC1-7):H01L29/91;H01L21/18;H01L29/167 |
主分类号 |
H01L29/165 |
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